PART |
Description |
Maker |
M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
Samsung semiconductor
|
KMM372V3280BS1 KMM372V3200BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
M372F3280DJ3-C M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG[Samsung semiconductor]
|
KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410C |
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 5V
|
Samsung Electronic Samsung semiconductor
|
KMM372C883CS KMM372C803CK KMM372C883CK KMM372C803C |
8M x 72 DRAM DIMM with ECC using 8Mx8, 4K 8K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M374F08083DJ3-CEDOMODE |
8M x 72 DRAM DIMM with ECC Using 8M x 8, 8K & 4K Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
M372V08083DJT0-CEDOMODE |
8M x 72 DRAM DIMM with ECC Using 8M x 8, 4K & 8K Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
KMM372V1680BS KMM372V1600BK KMM372V1600BS KMM372V1 |
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础6Mx8BanksK的参考。,3.3 Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础16Mx8BanksK的参考。,3.3
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
HSD16M72D18A-13 HSD16M72D18A-10 HSD16M72D18A-10L H |
Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|